Semiconductor substrate with transistors having different threshold voltages

ABSTRACT

A semiconductor integrated circuit is provided and includes a first field effect transistor (FET) device and a second FET device formed on a semiconductor substrate. The first FET device has raised source/drain (RSD) structures grown at a first height. The second FET device has RSD structures grown at a second height greater than the first height such that a threshold voltage of the second FET device is greater than a threshold voltage of the first FET device.

BACKGROUND

The present invention generally relates to semiconductor devices, and more specifically, to a semiconductor substrate having transistors with different threshold voltage values.

A system-on-chip (SOC) application may require various sets of transistors to achieve a balance between power and performance. Devices having varying threshold voltages V_(t) may be needed in an SOC application to meet different performance and power requirements. The threshold voltage V_(t) is a function of a number of parameters including channel length, gate material, gate insulation material and thickness, and the channel doping concentration.

In silicon-on-insulator (SOI) fabrication technology, transistors are built on a relatively thin silicon layer (or any other semiconducting material). The silicon layer rests on an insulating layer, usually constructed of silicon dioxide (SiO₂), and may be referred to as a buried oxide or BOX. Extremely thin SOI (ETSOI) devices generally have a silicon layer (also referred to as an ETSOI layer) with a thickness that is usually about 20 nanometers (nm) or less. Due to the limited thickness of the ETSOI layer, channel doping is generally less effective in ETSOI devices. However, the threshold voltage V_(t) is dependent on the level of channel doping concentration. In one alternative approach to doping, an ETSOI application with transistors having varying threshold voltages V_(t) may be created by using different gate stack structures. However, creating different gate stack structures on a single substrate may have severe process integration limitations especially when the difference in different threshold voltage V_(t) devices are around 100 mV.

SUMMARY

According to one embodiment, a semiconductor integrated circuit is provided and includes a first field effect transistor (FET) device and a second FET device formed on a semiconductor substrate. The first FET device has raised source/drain (RSD) structures grown at a first height. The second FET device has RSD structures grown at a second height greater than the first height such that a threshold voltage of the second FET device is greater than a threshold voltage of the first FET device.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a semiconductor substrate having a plurality of transistor devices;

FIG. 2 is another view of the semiconductor substrate in FIG. 1.

FIG. 3 is an alternative embodiment of the semiconductor substrate shown in FIG. 1;

FIG. 4 is an another embodiment of the semiconductor substrate shown in FIG. 1;

FIG. 5 is a process flow diagram illustrating a process for creating the semiconductor substrate as shown in FIGS. 1-4; and

FIGS. 6-11 are cross sectional views illustrating the exemplary for creating the semiconductor substrate as described in FIG. 5, in which:

FIG. 6 illustrates a starting ETSOI substrate;

FIG. 7 illustrates the formation of a gate stack on the ETSOI substrate of FIG. 6;

FIG. 8 illustrates patterning of the gate stack of FIG. 7;

FIG. 9 illustrates the formation of sidewall spacers on the patterned gate stack of FIG. 8;

FIG. 10 illustrates the formation of epitaxially grown raised source/drain (RSD) regions of different heights for different transistors;

FIG. 11 illustrates ion implantation of the structures of FIG. 10; and

FIG. 12 illustrates formation of secondary side wall spacers on the gate stack and creation of silicide contacts on the gate stack on the RSD structures.

DETAILED DESCRIPTION

The lack of effective channel doping in ETSOI devices results in a need for producing transistors having different threshold voltages V_(t) by other non-doping techniques. One such technique is described in exemplary embodiments of the present disclosure, and involves creating a single substrate having various transistors with a raised source drain configuration (RSD). The transistors as disclosed may be implemented in gate-first or gate-last approaches, and does not require changing the thickness of the ETSOI layer, the channel length, or the gate-dielectric layers and their thicknesses. The single substrate includes various transistors having different threshold voltages. The transistors as disclosed in the exemplary embodiments of the present disclosure do not require doped channels, thus avoiding a short channel penalty and dopant fluctuation variability. The single substrate as disclosed overcomes the current challenge of creating different gate stack structures on a single substrate to create different threshold voltages V_(t).

Referring now to FIG. 1, a cross-sectional view of an exemplary semiconductor structure 10 is shown. The semiconductor structure 10 (also referred to as an SOI wafer) may be used in an integrated circuit such as, for example, a system-on-a-chip (SOC) integrated circuit. The semiconductor structure 10 includes various transistors, two of which are illustrated as transistor 22 and transistor 24. The transistors 22 and 24 may be any type of field effect transistor (FET) such as, for example, an NFET or PFET device, that is produced using extremely thin silicon-on-insulator (ETSOI) fabrication technology. The transistors 22 and 24 may be, for example, fully depleted devices, planar type transistors such as transistors produced by a partially depleted SOI fabrication technology, or bulk-silicon devices. In the exemplary embodiment as shown, the semiconductor structure 10 includes a substrate 30, a buried oxide (BOX) layer 32, and an ETSOI layer 34 (also illustrated in FIG. 5). The BOX layer 32 may be constructed from an oxide, nitride, oxynitride or any combination thereof and an oxide such as silicon dioxide (SiO₂).

In one embodiment, the ETSOI layer 34 has a thickness ranging from about 1 nm to about 20 nm. In an alternative embodiment, the ETSOI layer 34 may include a thickness ranging from about 3 nm to about 10 nm. In one approach, the semiconductor structure or SOI wafer 10 is formed by thinning a relatively thick SOI wafer (a wafer having a thickness of about 30 nm to about 90 nm) using oxidation and a hydrofluoric (HF) wet etch. The ETSOI layer 34 can be any semiconducting material, including, but not limited to, Si (silicon), strained Si, SiC (silicon carbide), Ge (geranium), SiGe (silicon germanium), SiGeC (silicon-germanium-carbon), Si alloys, Ge alloys, GaAs (gallium arsenide), InAs (indium arsenide), InP (indium phosphide), or any combination thereof.

The transistors 22 and 24 each include a gate 40, at least one gate dielectric layer (two of which are illustrated in FIG. 1 as 42 and 44), and spacers 46 located on opposing lateral sides 48 of the gate 40. The gate 40 may be constructed from polysilicon or another conducting material such as metal (e.g., metal alloys, metal silicides, metal carbides, etc.). The dielectric layers 42 and 44 are placed along the ETSOI layer 32, and the gate 40 rests on the dielectric layers 42 and 44. The gate dielectric layers 42 and 44 may be constructed from a material such as, for example, silicon oxide, silicon oxynitride (SiON), a high-k dielectric material (e.g., a hafnium- or aluminum-based material), or a combination thereof. The gate 40 may be created using conventional gate-first approaches, or alternatively, a replacement metal gate flow approach. In one embodiment, the spacers 46 may be constructed from an oxide.

The transistors 22 and 24 each include a raised source/drain (RSD) structures 50. The RSD structures 50 are epitaxially grown. The epitaxially grown RSD structures 50 may be constructed from various types of semiconductor material such as, for example, silicon-germanium (SiGe) or silicon carbide (SiC). Epitaxial growth occurs on a top surface 54 of the ETSOI layer 34. When the chemical reactants are controlled and the system parameters set correctly, the depositing atoms arrive at the top surface 54 of the ETSOI layer 34 with sufficient energy to move around on the surface and orient themselves to the crystal arrangement of the atoms of the deposition surface. For example, an epitaxial film deposited on a [100] crystal surface (cut along the [100] plane) will take on a [100] orientation. If, on the other hand, the wafer has an amorphous surface layer, the depositing atoms have no surface to align to and form polysilicon instead of single crystal silicon. Silicon sources for the epitaxial growth include silicon tetrachloride, dichlorosilane (SiH₂Cl₂), and silane (SiH₄). The temperature for this epitaxial silicon deposition is from about 550° C. to about 900° C. In one embodiment, doped RSD structures 50 may be formed through epitaxial growth of SiGe on the top surface 54 of the ETSOI layer 34. The Ge content of the epitaxial grown SiGe ranges from about 5% to about 60% (by atomic weight). In another embodiment, the Ge content of the epitaxial grown SiGe ranges from about 10% to about 40%.

The RSD devices 50 have an epitaxy height, where the transistor 22 includes an epitaxy height H1 and the transistor 24 includes an epitaxy height H2, measured from the top surface 54 of the ETSOI layer 34. As seen in FIG. 1, the epitaxy height H1 is less than the epitaxy height H2. Thus, the epitaxy height of the various RSD structures 50 located on the semiconductor substrate 10 may vary, however the PC pitch (e.g., the pitch between two substantially parallel gates 40, which is indicated by reference number 52 in FIG. 2), the gate lengths L_(g), and the gate insulator thicknesses T_(g) of the dielectric layers 42 and 44 remain generally constant between the transistors 22 and 24.

For example, in one illustrative embodiment, the semiconductor substrate 10 could include various transistors, where a portion of the transistors have an epitaxy height of about 12 nm, another portion of the transistors have an epitaxy height of about 20 nm, and a remaining portion of the transistors have an epitaxy height about 30 nm. In another embodiment, a portion of the transistors have an epitaxy height of about 12 nm, another portion of the transistors have an epitaxy height of about 15 nm, and a remaining portion of the transistors have an epitaxy height of about 18 nm. In one embodiment, the epitaxy height of the transistors may generally range from about 3 nm to about 35 nm, where the transistor 22 ranges from about 3 nm to about 30 nm, and the transistor 24 ranges from about 6 to about 35 nm.

The RSD structures 50 may be created by one or more deposition processes such as, for example, atomic layer deposition (ALD), molecular layer deposition (MLD), chemical vapor deposition (CVD), low-pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), high density plasma chemical vapor deposition (HDPCVD), sub-atmospheric chemical vapor deposition (SACVD), rapid thermal chemical vapor deposition (RTCVD), in-situ radical assisted deposition, high temperature oxide deposition (HTO), low temperature oxide deposition (LTO), ozone/TEOS deposition, limited reaction processing CVD (LRPCVD), ultrahigh vacuum chemical vapor deposition (UHVCVD), metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), physical vapor deposition, sputtering, plating, evaporation, spin-on-coating, ion beam deposition, electron beam deposition, laser assisted deposition, chemical solution deposition, or any combination thereof.

The epitaxy heights of the RSD structures 50 may be varied by masking various regions of the semiconductor substrate depending on the intended epitaxy height of the RSD structures 50. Specifically, for example, the transistor 22 may be masked first, and the RSD structure 50 of the transistor 24 is allowed to epitaxially grow to the epitaxy height H2. Then, the masking is removed from the transistor 22, and the transistor 24 is masked. The RSD structures 50 corresponding to the transistor 22 are then epitaxially grown to the epitaxy height H1. In one embodiment, the RSD structures 50 may be in-situ doped (i.e., doped when grown).

After epitaxially growing the RSD structures 50, the semiconductor substrate 10 undergoes ion implantation. Ions are implanted into the RSD structure 50 and the ETSOI layer 34, creating extension structures 60 of the RSD structures 50 within the ETSOI layer 34. It should be noted that the dopant ions, ion energy, tilt, and angle of implantation are substantially the same for both transistors 22 and 24 during ion implantation. The gate 40 and the spacers 46 act as a mask during ion implantation such that portions of the ETSOI layer 34 may not experience significant ion implantation. These portions of the ETSOI layer 34 that do not experience significant ion implantation create a channel 62 within the ETSOI layer 34 between the extension structures 60. The semiconductor substrate 10 may then undergo junction annealing to activate the dopant within the extension structures 60. Some examples of annealing processes include, for example, rapid thermal annealing, furnace annealing, flash lamp annealing, or a combination thereof.

An effective length of each channel 62 depends on the epitaxy height of the RSD structures 50. Specifically, the greater the epitaxy height of the RSD structure 50, the greater the effective length of the channel 62. For example, the transistor 22 includes a channel length L_(em), and the transistor 24 includes a channel length L_(eff2). The epitaxy height H2 of the transistor 24 is greater than the epitaxy height H1 of the transistor 22. Thus, the channel length L_(eff2) is greater than the channel length L_(eff1). This is because as the epitaxy height of the RSD structures 50 increase, less ion implantation occurs within the ETSOI layer 34, thereby creating a longer effective channel length. However, although the effective channel length varies, both transistors 22 and 24 generally have about the same channel length, L_(g).

The effective channel length of the channel 62 will affect a threshold voltage V_(t) of the transistors 22 and 24. Specifically, a longer effective channel length will result in a relatively higher threshold voltage V_(t), and a shorter effective channel length will result in a relatively lower threshold voltage V_(t). For example, the transistor 22 with the effective channel length L_(eff1) has a lower threshold voltage V_(t) than the transistor 24 with the effective channel length L_(eff2). Thus, the semiconductor substrate 10 will include various transistors (e.g., transistors 22 and 24) that have varying threshold voltages V_(t), which may be required various SOC applications to meet different performance and power requirements.

FIG. 3 is an alternative embodiment of a semiconductor substrate 110 having transistors 122 and 124. The transistors 122 and 124 each include a gate silicide contact 170 for gates 140, and silicide contacts 172 for RSD structures 150. The gate silicide contact 170 and the silicide contacts 172 may be created by depositing a metal layer over the gates 140 and the RSD structures 150, followed by an annealing process such as, for example, rapid thermal annealing. During annealing, the metal reacts with silicon to form a metal silicide. The metal layer may be, for example, nickel, cobalt, titanium, platinum, or a combination thereof. In the exemplary embodiment as shown in FIG. 2, the transistors 122 and 124 may also include secondary spacers 176 that are placed over spacers 146. The secondary spacers 176 may be created by reactive ion etching (RIE).

FIG. 4 is another embodiment of a semiconductor substrate 210 having transistors 222 and 224. The transistors 222 and 224 each include a gate silicide contact 270 for gates 240, and silicide contacts 272 for RSD structures 250. In the embodiment as shown, the transistors 222 and 224 also include RSD structures 250 having a faceted cross-section. That is, the RSD structures 250 have lateral sides 278 that are sloped or angled.

A method of creating the semiconductor substrate 10, 110 or 210 will now be described. Turning now to FIG. 5, a process flow diagram 300 is illustrated. Referring now to FIGS. 5-6, the method may begin at block 302 by providing an ETSOI substrate 80 (shown in FIG. 5). The ETSOI substrate 80 includes the substrate 30, the BOX layer 32, and the ETSOI layer 34. Method 300 may then proceed to block 304.

Referring now to FIGS. 5 and 7, in block 304 a gate stack 82 is deposited over the ETSOI layer 34. The gate stack 82 may include a gate material 84, and various gate dielectric layers 86 and 88. Method 300 may then proceed to block 306.

Referring now to FIGS. 5 and 8, in block 306, the gate 40 and the dielectric layers 42 and 44 are created by a conventional gate patterning process. This also defines the gate length Lg. Although a conventional gate patterning process is discussed, it is to be understood that alternative approaches may be used as well to create the gate 40. For example, in another approach, a replacement metal gate flow process utilizing a sacrificial polysilicon gate may be used instead. Method 300 may then proceed to block 308.

Referring now to FIGS. 5 and 9, in block 308 the spacers 46 are added to the lateral sides 48 of the gate 40. The spacers 46 may be constructed from an oxide, and are created using a selective anisotropic etching process. Method 300 may then proceed to block 310.

Referring now to FIGS. 5 and 10, in block 310 the RSD structures 50 are grown on the ETSOI layer 32 to different epitaxy heights. The RSD structures 50 may be created by a deposition process as described above, where the epitaxy heights of the RSD structures 50 may be varied by masking various regions of the semiconductor substrate depending on the intended epitaxy height of the RSD structures 50. In one embodiment as shown in FIG. 3, the RSD structures 250 are epitaxially grown to create a faceted cross-section. Method 300 may then proceed to block 312.

Referring to FIGS. 5 and 11, in block 312 the semiconductor substrate 10 undergoes ion implantation. The semiconductor substrate 10 may then undergo junction annealing to activate dopant within the extension structures 60. Method 300 may then proceed to block 314.

Referring now to FIGS. 3 and 12, in block 314 the secondary spacer 176 may be added to the transistors 22 and 24 by a reactive ion etching (RIE) approach. It should be noted that block 314 is optional, and may be omitted in some embodiments. Method 300 may then proceed to block 316.

With continued reference to FIGS. 3 and 12, in block 316 the transistors 122 and 124 each include silicide contacts 172 for the RSD structures 150. The silicide contacts 172 may be created by depositing a metal layer such as, for example, nickel, cobalt, titanium, platinum, or a combination thereof over the gates 140 and the RSD structures 150, followed by an annealing process such as, for example, rapid thermal annealing. The gate silicide contact 170 may be included. The gate silicide contact 170 is also created by depositing metal over the gate 140, and followed by an annealing process. It should be noted that block 316 is also optional, and may be omitted in some embodiments. Method 300 may then terminate.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an”, and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

The flowchart and block diagrams in the Figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware and computer instructions.

The corresponding structures, materials, acts, and equivalents of all means or step plus function elements in the claims below are intended to include any structure, material, or act for performing the function in combination with other claimed elements as specifically claimed. The description of the present invention has been presented for purposes of illustration and description, but is not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the invention. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated. 

1. A semiconductor integrated circuit, comprising: a first field effect transistor (FET) device and a second FET device formed on a semiconductor substrate; the first FET device having raised source/drain (RSD) structures grown at a first height and the second FET device having RSD structures grown at a second height greater than the first height such that a threshold voltage of the second FET device is greater than a threshold voltage of the first FET device, wherein an effective channel length of the second FET device is longer than an effective channel length of the first FET device such that extension structures of the first FET device extend further beneath a gate structure thereof in a lateral direction with respect to extension structures of the second FET device, and wherein a gate length of the second FET device is the same as a gate length of the first FET device.
 2. (canceled)
 3. The semiconductor integrated circuit of claim 1, wherein an epitaxy height of the RSD structures of the first FET device ranges from about 3 nm to about 30 nm.
 4. The semiconductor integrated circuit of claim 1, wherein an epitaxy height of the RSD structures of the second FET device ranges from about 6 nm to about 35 nm.
 5. The semiconductor integrated circuit of claim 1, wherein the semiconductor substrate comprises an extremely thin silicon-on-insulator (ETSOI) substrate.
 6. The semiconductor integrated circuit of claim 5, comprising at least one gate dielectric layer that is formed on the ETSOI layer, wherein gate structures of the first and second FET devices are formed on the at least one gate dielectric layer.
 7. The semiconductor integrated circuit of claim 6, wherein a gate length of the gate structures, and a gate insulator thickness of the at least one gate dielectric layer of the first and second FET devices are the same.
 8. The semiconductor integrated circuit of claim 6, wherein the at least one gate dielectric layer is selected from the group consisting of silicon oxynitride (SiON) and a high-k dielectric.
 9. The semiconductor integrated circuit of claim 6, further comprising a first set of spacers disposed on lateral sidewalls of gate structures of the first and second FET devices, wherein the first set of spacers are located on opposing lateral sides of the gate structures.
 10. The semiconductor integrated circuit of claim 9, further comprising a second set of spacers disposed on opposing lateral sides of the first set of spacers.
 11. The semiconductor integrated circuit of claim 6, wherein each of the gate structures includes a gate silicide contact.
 12. The semiconductor integrated circuit of claim 1, wherein the RSD structures of the first and second FET devices includes a faceted configuration.
 13. The semiconductor integrated circuit of claim 1, wherein the semiconductor integrated circuit is a system-on-a-chip (SOC) integrated circuit.
 14. The semiconductor integrated circuit of claim 1, wherein the RSD structures of the first and second FET devices includes a silicide contact.
 15. The semiconductor integrated circuit of claim 1, wherein channel regions of the first and second FET devices are undoped.
 16. The semiconductor integrated circuit of claim 6, wherein a PC pitch that is a pitch between two substantially parallel gates, remains constant between a plurality of FETs. 